سه شنبه 11 اردیبهشت 1403
| عنوان مقاله | |
| عنوان مقاله |
High-Voltage 12.5-V Backside-Illuminated CMOS Photovoltaic Mini-Modules |
| عنوان فارسی مقاله | مینی ماژول های فتوولتائیک CMOS با ولتاژ بالا با ولتاژ 12.5-V |
| مشخصات مقاله انگلیسی | |
| نشریه: Ieee |
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| سال انتشار |
2018 |
| عنوان مجله |
Journal of the electron devises soctety |
| تعداد صفحات مقاله انگلیسی | 4 |
| رفرنس | دارد |
| تعداد رفرنس | 13 |
| چکیده مقاله | |
| چکیده |
In this paper, we employed a one-step localized substrate removal (LSR) process to fabricate a backside-illuminated CMOS photovoltaic (PV) mini-module suitable for high-voltage and low-power applications. LSR can be considered an upgrade of multichip module technology, by providing a 50-µm physical gap between on-chip PV cells for electrical isolation, while avoiding the need for time-consuming pick-and-place steps. A proof-of-concept PV module achieved open-circuit voltage of 12.5-V and µA-scale short-circuit current within a small form factor (3.13 V/mm2). The fabrication of this PV mini-module is based on standard microelectronics manufacturing/packaging processes, thereby ensuring easy integration with other microelectronics for self-powered systems. |
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| دانلود | |
